| 摘要 |
A semiconductor device includes a substrate (105) having a top surface (109) and a bottom surface (1 10), and a through-silicon via (TSV) (103) extending from the top surface (109) of the substrate (105) to the bottom surface (1 10) of the substrate (105), the TSV (103) having a height and a side profile extending along a longitudinal axis (200), where the side profile has an upper segment (201, 21 1, 301, 401, 501, 601 ) forming a first angle relative to the longitudinal axis (200), and a lower segment (202, 212, 302, 402, 502, 603) forming a second angle relative to the longitudinal axis (200), where the second angle is different than the first angle, and where the lower segment (202, 212, 302, 402, 502, 603) has a height that is less than 20% of the height of the TSV (103). |
