CREATING ANISOTRPICALLY DIFFUSED JUNCTIONS IN FIELD EFFECT TRANSISTOR DEVICES
摘要
<p>A method of forming a transistor device includes implanting a diffusion inhibiting species in a semiconductor-on-insulator substrate comprising a bulk substrate, a buried insulator layer, and a semiconductor-on-insulator layer, the semiconductor-on-insulator substrate having one or more gate structures formed thereon such that the diffusion inhibiting species is disposed in portions of the semiconductor-on-insulator layer corresponding to a channel region, and disposed in portions of the buried insulator layer corresponding to source and drain regions. A transistor dopant species is introduced in the source and drain regions. An anneal is performed so as to diffuse the transistor dopant species in a substantially vertical direction while substantially preventing lateral diffusion of the transistor dopant species into the channel region.</p>
申请公布号
WO2012062791(A1)
申请公布日期
2012.05.18
申请号
WO2011EP69717
申请日期
2011.11.09
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;GREENE, BRIAN;LIANG, QINGQING;JOHNSON, JEFFREY, BOWMAN;MACIEJEWSKI, EDWARD
发明人
GREENE, BRIAN;LIANG, QINGQING;JOHNSON, JEFFREY, BOWMAN;MACIEJEWSKI, EDWARD