发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A manufacturing method of a semiconductor device is provided to provide a semiconductor device with excellent high temperature and high-humidity reliability without degradation of moldability and hardening property. CONSTITUTION: A manufacturing method of a semiconductor device comprises a step of resin-sealing a semiconductor device by using epoxy resin composition for sealing semiconductor, and a step of heat-treating. The epoxy resin composition comprises an epoxy resin in chemical formula 1, a phenol resin, an amine-based hardening accelerator, and an inorganic filler. In chemical formula 1, X is a single bond, -CH2-, -S- or -O-, and R1-R4 is -H or -CH3, and is acceptable to be same or different from each other.
申请公布号 KR20120050388(A) 申请公布日期 2012.05.18
申请号 KR20110116504 申请日期 2011.11.09
申请人 NITTO DENKO CORPORATION 发明人 IWASHIGE TOMOHITO;ICHIKAWA TOMOAKI;SUGIMOTO NAOYA;FUSUMADA MITSUAKI;HOTEHAMA HIROYUKI;AKIZUKI SHINYA
分类号 H01L23/29;H01L23/18 主分类号 H01L23/29
代理机构 代理人
主权项
地址