METHOD FOR FORMING THERMAL OXIDE FILM OF MONOCRYSTALLINE SILICON WAFER

摘要

In this method for forming a thermal oxide film of a monocrystalline silicon wafer, the monocrystalline silicon wafer is introduced into a heat-treatment furnace, the wafer is heated to a temperature (T1) at which a thermal oxide film is formed, thus forming a thermal oxide film having thickness (d1), and then, after being cooled to a temperature that is lower than temperature (T1), is heated to temperature (T2) that is higher than temperature (T1), thus additionally forming a thermal oxide film having thickness (d2) that is thicker than thickness (d1). As a result, provided is a method for forming a thermal oxide film that can prevent adherence to a wafer boat arising when forming a particularly thick thermal oxide film, and can suppress the occurrence of slip dislocations or cracks in the monocrystalline silicon wafer during formation of the thermal oxide film.