A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.
申请公布号
WO2012064373(A2)
申请公布日期
2012.05.18
申请号
WO2011US01904
申请日期
2011.11.14
申请人
BANDGAP ENGINEERING INC.;MODAWAR, FARIS;MILLER, JEFF;JURA, MIKE;MURPHY, BRIAN;BLACK, MARCIE;BUCHINE, BRENT, A.
发明人
MODAWAR, FARIS;MILLER, JEFF;JURA, MIKE;MURPHY, BRIAN;BLACK, MARCIE;BUCHINE, BRENT, A.