发明名称 LITHOGRAPHY SYSTEM AND METHOD OF REFRACTING
摘要 <p>A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.</p>
申请公布号 WO2012062854(A1) 申请公布日期 2012.05.18
申请号 WO2011EP69840 申请日期 2011.11.10
申请人 MAPPER LITHOGRAPHY IP B.V.;VAN VEEN, ALEXANDER, HENDRIK, VINCENT;ZHANG, YANXIA;BERGLUND, GUN SARI MARI;KRUIT, PIETER 发明人 VAN VEEN, ALEXANDER, HENDRIK, VINCENT;ZHANG, YANXIA;BERGLUND, GUN SARI MARI;KRUIT, PIETER
分类号 H01J37/04;H01J37/09;H01J37/22;H01J37/24;H01J37/317 主分类号 H01J37/04
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