摘要 |
<p>A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.</p> |
申请人 |
MAPPER LITHOGRAPHY IP B.V.;VAN VEEN, ALEXANDER, HENDRIK, VINCENT;ZHANG, YANXIA;BERGLUND, GUN SARI MARI;KRUIT, PIETER |
发明人 |
VAN VEEN, ALEXANDER, HENDRIK, VINCENT;ZHANG, YANXIA;BERGLUND, GUN SARI MARI;KRUIT, PIETER |