| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to obtain the same bit line height and resistance by forming a spacer between a storage electrode contact plug and a bit line. CONSTITUTION: A storage node contact plug material is buried into a storage electrode contact hole. A storage node contact plug(145) and a first bit line region(150a) are formed by dividing the storage node contact plug material into two. A second bit line region(150b) is formed by etching the storage electrode contact plug. A spacer(152a) is formed on a sidewall of the second bit line region. A bit line(160) is formed by filling a bit line material in the first and second bit line regions.
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