SEMICONDUCTOR LIGHT EMITTING DIODE HAVING OHMIC ELECTRODE STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed are a semiconductor light emitting diode having an ohmic electrode structure and a method for manufacturing the same. According to one aspect of the present invention, the semiconductor light emitting diode comprises: a light emitting structure having an upper surface which is in an N-plane; and an ohmic electrode structure positioned on said light emitting structure. Said ohmic electrode structure comprises, from the N-plane of said light emitting structure, a lower diffusion prevention layer, a contact layer, an upper diffusion prevention layer, and an A1 protection layer. By adopting the multilayered ohmic electrode structure that includes the lower diffusion prevention layer / contact layer / upper diffusion prevention layer / A1 protection layer, deterioration of the ohmic contact property on the N-plane semiconductor layer is prevented in such a manner that a semiconductor light emitting diode with excellent thermal stability can be provided.