| 摘要 |
<p>A semiconductor memory cell, a device and a manufacturing method thereof are provided. The semiconductor memory cell includes: a substrate; a channel region located on the substrate; a gate area located on the channel region; a source area and a drain area located on the substrate and the both sides of the channel region; a buried layer located between the substrate and the channel region. The energy gap of the buried layer material is narrower than the energy gap of the channel region material. Because the energy gap of the buried layer material is narrower than the energy gap of the channel region material, the hole barrier is formed in the buried layer, the holes, which is stored in the buried layer, face barrier, and therefore the holes are difficultly leaked out, so that the time of holding information of memory cell using the floating body effect is increased.</p> |
