发明名称 |
SURFACE-EMITTING LASER WITH SURFACE RELIEF, SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY AND OPTICAL APPARATUS EQUIPPED WITH SAID SURFACE-EMITTING LASER ARRAY |
摘要 |
<p>A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing a dielectric film on the semiconductor layers and a first-etch stop layer along a second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer (130, 132, 134) and total thickness of three layers is equal to the optical thickness of an odd multiple of 1/4 wavelength (?: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer (128) and the first-etch stop layer (130) is laid right on this etch stop layer.</p> |
申请公布号 |
WO2012063884(A1) |
申请公布日期 |
2012.05.18 |
申请号 |
WO2011JP75876 |
申请日期 |
2011.11.02 |
申请人 |
CANON KABUSHIKI KAISHA;UCHIDA, TATSURO;UCHIDA, TAKESHI |
发明人 |
UCHIDA, TATSURO;UCHIDA, TAKESHI |
分类号 |
H01S5/183;H01S5/20 |
主分类号 |
H01S5/183 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|