发明名称 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
摘要 <p>Abstract A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone includes one or more heater elements made of an insulator-conductor composite. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic sheets having planar heater zones, power supply lines, power return lines and vias.</p>
申请公布号 WO2012064543(A1) 申请公布日期 2012.05.18
申请号 WO2011US58590 申请日期 2011.10.31
申请人 LAM RESEARCH CORPORATION;SINGH, HARMEET 发明人 SINGH, HARMEET
分类号 H01L21/3065 主分类号 H01L21/3065
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