| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase cell currents since a channel region is obtained by filling a gate electrode material in an isolation region. CONSTITUTION: A buried gate region(150) is formed in a semiconductor substrate. An isolation region(160) separated from the buried gate region is formed through a thermal process. The thermal process is performed in a H2 atmosphere. The isolation region is formed in a lower portion of the buried gate region. A gate electrode layer is formed on the buried gate region and isolation region.</p> |
