| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrodeposition method for filling an opening such as a trench or a via having a width smaller than about 100 nm, preferably about 70 nm, more preferably about 50 nm, and further preferably about 35 nm specifically in the field of manufacturing a semiconductor integrated circuit (IC) device. <P>SOLUTION: Copper deposition is electrodeposited by immersing a substrate into an electrodeposition bath having a copper ion concentration between 0.5 mmol l<SP POS="POST">-1</SP>and 50 mmol l<SP POS="POST">-1</SP>and an acid concentration between 0.05% and 10% per volume of the electrodeposition bath. <P>COPYRIGHT: (C)2012,JPO&INPIT |
