发明名称 Semiconductor Device With A Plurality Of Mark Through Substrate Vias
摘要 The present invention relates to a semiconductor device with a plurality of mark through substrate vias, comprising a semiconductor substrate, a plurality of original through substrate vias and a plurality of mark through substrate vias. The original through substrate vias and the mark through substrate vias are disposed in the semiconductor substrate and protrude from the backside surface of the semiconductor substrate. The mark through substrate vias are added at a specific position and/or in a specific pattern and serve as a fiducial mark, which facilitates identifying to the position and direction on the backside surface. Thus, the redistribution layer (RDL) or the special equipment for achieving the backside alignment (BSA) is not necessary.
申请公布号 US2012119335(A1) 申请公布日期 2012.05.17
申请号 US20100945134 申请日期 2010.11.12
申请人 SHEN CHI-CHIH;CHEN JEN-CHUAN;CHANG HUI-SHAN;WU CHUNG-HSI;WANG MENG-JEN 发明人 SHEN CHI-CHIH;CHEN JEN-CHUAN;CHANG HUI-SHAN;WU CHUNG-HSI;WANG MENG-JEN
分类号 H01L29/41 主分类号 H01L29/41
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