| 摘要 |
A semiconductor memory apparatus including a repair circuit may comprise: a fuse set block configured to store a repair address, compare the repair address with an input address, and generate a primary repair signal; and a redundancy control block configured to receive the primary repair signal, determine whether a repair cell in a repair memory designated by the primary repair signal is failed or not, and generate a secondary repair signal which repair the failed repair cell with another repair cell in the repair memory. |
