SEMICONDUCTOR DEVICE AND HEAVY HYDROGEN PROCESSING APPARATUS FOR SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a gate oxide film/a semiconductor interface having an interface level density, and a method for forming the same.

SOLUTION: The semiconductor device comprises a metal-insulation film-semiconductor (MIS) structure having a heavy hydrogen concentration equal to or more than 1×1019cm-3in the neighborhood of an interface between a semiconductor substrate and films or layers formed in the semiconductor device such as a gate insulation film, an interlayer insulation layer, and a protective insulation film. The heavy hydrogen termination of a dangling bond present near a gate insulation film/silicon-carbide semiconductor interface at a low temperature not higher than 600°C is intended by using activated heavy hydrogen generated by the heat catalytic action of the gas containing heavy hydrogen at a highly-heated surface of a heat catalyst for a semiconductor device (a field effect transistor (MIS or MOSFET)) having a metal-insulation film (or an oxide film) - semiconductor (MIS or MOS) structure formed on the semiconductor substrate containing the silicon carbide region.

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