| 摘要 |
PURPOSE: A resin and a photoresist composite are provided to prevent pattern collapse of the photoresist pattern while manufacture line and space pattern of finer micron line width. CONSTITUTION: A resin has a structure which is represented by chemical formula aa. In the chemical formula, T^1 indicates substituted or non-substituted C4-34 sulton cyclic group, and X^1 is either -O- or - N (R^c)-. Here, R^c is either hydrogen or C1-6 alkyl group, Z^1 indicates *-X^2 or *-X^2-X^4-CO-X^3-. X^2 and X^3 are respectively C1-6 alkanediyl group. X^4 is -O- or -N(R^c)-, and *indicates combining portion with X. R^1 indicates alkyl group substituted or non-substituted with halogen, hydrogen, or halogen. The photoresist composite contains the resin and an acid generator. |
