COMPOSITION FOR FORMING A PHOTORESIST TOP COAT LAYER IN EXTREME ULTRAVIOLET LITHOGRAPHY AND PATTERNING METHOD USING THE SAME

摘要

PURPOSE: A composition for forming photoresist topcoat and a pattern forming method using the same are provided to improve line width roughness and to form uniform micro patterns by overcoming pattern defects due to exposure to ultraviolet ray out of the light in a band between 100 and 300nm. CONSTITUTION: A composition for forming photoresist topcoat includes 100 parts by weight of aqueous binder resins, 0.01 to 30 parts by weight of agents for blocking light out of an extreme ultraviolet ray band, and 1,000 to 10,000 parts by weight of protonic solvents. The main absorption wavelength of the agents is between 100 and 300nm. The agents are selected from a group including aqueous sulfonic acid ester, the salt of sulfonic acid ester, sulfonium compound, iodonium compound, and oxime compound. The agents are represented by chemical formula 24. In chemical formula 24, Bs are capable of being identical or different and are C1 to C10 alkyl groups or alicyclic substituted groups; m is the integer of 0 to 8; n is the natural number of 1 to 8; the sum of m and n is more than or equal to 8; As are capable of being identical or different and are hydroxyl groups, carboxylic groups, ether groups, or ester groups.