| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of improving the operating characteristic of a semiconductor memory device by setting the best operating condition and operating the semiconductor memory device by the best operating condition, and the operation method thereof. <P>SOLUTION: A semiconductor memory device includes a memory block including a memory string MS having a channel layer SC connected between a bit line BL and a source line SL, an operation circuit group configured to supply a hot hole h to the channel layer SC so as to perform an erasing operation of a memory cell C included in the memory string MS, an erasing operation determination circuit 460 configured so as to output a block erase enable signal BERASE_EN when the hot hole h is supplied to the channel layer SC by a target amount or more, and a control circuit 450 configured so as to control a time when the operation circuit group performs an erasing operation in response to the block erase enable signal BERASE_EN. <P>COPYRIGHT: (C)2012,JPO&INPIT |
