| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device or a solid state image pick up device in which elements having different functions are laminated and which can form a shield layer between an upper element and a lower element easily, thereby providing the semiconductor device or the solid state image pick up device in which the influence of the electromagnetic wave and the cross talk generated between the upper and the lower elements are reduced. <P>SOLUTION: The image pick up element 22 comprises a first semiconductor substrate 27; a first wiring layer 30; and a first metal layer 31 formed on an upper part of the first wiring layer 30, and a pixel region having a rear side of the first semiconductor substrate 27 acting as a light receiving surface is formed. A logic element 26 comprises a second semiconductor substrate 45; a second wiring layer 48; and a second metal layer 32 formed on an upper part of the second wiring layer 48, and a signal processing circuit for processing a pixel signal obtained in the pixel region, is formed. The image pick up element 22 and the logic element 26 are laminated to each other so that the first metal layer 31 and the second metal layer 32 are bonded. <P>COPYRIGHT: (C)2012,JPO&INPIT |
