| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition method for a silicon oxide film by a chemical vapor deposition (CVD) method, which can form a silicon oxide containing fewer OH groups without performing extra modification process such as thermal treatment or chlorine processing after the deposition of the silicon oxide film. <P>SOLUTION: According to a method for depositing a silicon oxide film on a silicon wafer for epitaxial growth by a CVD method, the silicon oxide film is formed by the CVD method under a reaction gas atmosphere containing chlorine gas in addition to silicon source gas on a silicon wafer prior to the growth of an epitaxial layer on its surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
