| 发明名称 |
TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE |
| 摘要 |
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.
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| 申请公布号 |
US2012119222(A1) |
申请公布日期 |
2012.05.17 |
| 申请号 |
US201213357432 |
申请日期 |
2012.01.24 |
| 申请人 |
BAKER TROY J.;HASKELL BENJAMIN A.;FINI PAUL T.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMUA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
BAKER TROY J.;HASKELL BENJAMIN A.;FINI PAUL T.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMUA SHUJI |
| 分类号 |
H01L33/32;H01L21/205;H01L33/00 |
主分类号 |
H01L33/32 |
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