发明名称 |
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask. |
申请公布号 |
US2012122286(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201113290285 |
申请日期 |
2011.11.07 |
申请人 |
KIM SANG-JIN;SHIN JONG-CHAN;BAE YONG-KUG;KIM DO-HYOUNG;PARK DONG-WOON;SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM SANG-JIN;SHIN JONG-CHAN;BAE YONG-KUG;KIM DO-HYOUNG;PARK DONG-WOON |
分类号 |
H01L21/336;H01L21/768 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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