| 发明名称 |
METAL LINE FORMING METHOD OF SEMICONDUCTOR DEVICES |
| 摘要 |
<p>PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to control the generation of a pattern bridge by forming a grain size to be larger than a metal wiring pattern. CONSTITUTION: A source material(S) including aluminum becomes evaporated. The source material is frozen on a semiconductor substrate which is in a range of -50 to 200°C. A metal layer(110) consisting of the source material is formed. The metal layer is formed through a chuck(C) on which a heat exchanger is attached. The metal layer is patterned and a metal wiring is formed.</p> |
| 申请公布号 |
KR20120049477(A) |
申请公布日期 |
2012.05.17 |
| 申请号 |
KR20100110741 |
申请日期 |
2010.11.09 |
| 申请人 |
SK HYNIX INC. |
发明人 |
RYU, IN CHEOL;OH, JAE MIN;KIM, HAK WOON |
| 分类号 |
H01L21/28;H01L21/027 |
主分类号 |
H01L21/28 |
| 代理机构 |
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