| 摘要 |
An electroless plated metal layer formation method for forming a metal layer on a diode chip/wafer for wire bonding is disclosed to include the step of forming a metal base material on a diode chip/wafer adapted for inducing a reduction system to cause a catalytic reaction at location(s) where the desired metal layer is to be formed, and the step of employing an electroless plating process to form a metal layer on the diode chip/wafer that surrounds the metal base material. An isolation layer may be formed on the metal base layer and opening(s) may be formed on the isolation layer before deposition of the metal layer.
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