发明名称 CHARGE RECYCLING IN POWER-GATED CMOS CIRCUIT AND IN SUPER CUTOFF CMOS CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To reduce power consumption during mode transition in power-gated circuits such as MTCMOS circuits and SCCMOS circuits, and reduce wakeup time and noise generated by the power gating structure. <P>SOLUTION: The circuit includes: a first virtual ground node between a first circuit block and a first sleep transistor; a second virtual ground node between a second circuit block and a second sleep transistor; and a transmission gate (TG) or a pass transistor connecting the first virtual ground node to the second virtual ground node to enable charge recycling between the first circuit block and the second circuit block during transitions by the first circuit block from active mode to sleep mode and the second circuit block from sleep mode to active mode or vice versa. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012095358(A) 申请公布日期 2012.05.17
申请号 JP20120022351 申请日期 2012.02.03
申请人 FUJITSU LTD 发明人 FALLAH FARZAN;PAKBAZNIA EHSAN;PEDRAM MASSOUD
分类号 H03K19/0948;H01L21/822;H01L27/04 主分类号 H03K19/0948
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