发明名称 |
CHARGE RECYCLING IN POWER-GATED CMOS CIRCUIT AND IN SUPER CUTOFF CMOS CIRCUIT |
摘要 |
<P>PROBLEM TO BE SOLVED: To reduce power consumption during mode transition in power-gated circuits such as MTCMOS circuits and SCCMOS circuits, and reduce wakeup time and noise generated by the power gating structure. <P>SOLUTION: The circuit includes: a first virtual ground node between a first circuit block and a first sleep transistor; a second virtual ground node between a second circuit block and a second sleep transistor; and a transmission gate (TG) or a pass transistor connecting the first virtual ground node to the second virtual ground node to enable charge recycling between the first circuit block and the second circuit block during transitions by the first circuit block from active mode to sleep mode and the second circuit block from sleep mode to active mode or vice versa. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012095358(A) |
申请公布日期 |
2012.05.17 |
申请号 |
JP20120022351 |
申请日期 |
2012.02.03 |
申请人 |
FUJITSU LTD |
发明人 |
FALLAH FARZAN;PAKBAZNIA EHSAN;PEDRAM MASSOUD |
分类号 |
H03K19/0948;H01L21/822;H01L27/04 |
主分类号 |
H03K19/0948 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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