发明名称 |
Semiconductor Device and Manufacturing Method of the Same |
摘要 |
With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.
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申请公布号 |
US2012119339(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201213354635 |
申请日期 |
2012.01.20 |
申请人 |
OIKAWA YOSHIAKI;EGUCHI SHINGO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OIKAWA YOSHIAKI;EGUCHI SHINGO |
分类号 |
H01L23/552 |
主分类号 |
H01L23/552 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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