发明名称 |
METHOD AND DEVICE FOR INCREASING FIN DEVICE DENSITY FOR UNALIGNED FINS |
摘要 |
A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. A plurality of elongate mandrels is defined in a plurality of active regions. Where adjacent active regions are partially-parallel and within a specified minimum spacing, connective elements are added to a portion of the space between the adjacent active regions to connect the mandrel ends from one active region to another active region. |
申请公布号 |
US2012124528(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201113227809 |
申请日期 |
2011.09.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIEN-HSUN;CHANG CHIH-SHENG;LIN YI-TANG;SHIEH MING-FENG |
分类号 |
G06F17/50;G03F1/00 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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