发明名称 METHOD AND DEVICE FOR INCREASING FIN DEVICE DENSITY FOR UNALIGNED FINS
摘要 A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. A plurality of elongate mandrels is defined in a plurality of active regions. Where adjacent active regions are partially-parallel and within a specified minimum spacing, connective elements are added to a portion of the space between the adjacent active regions to connect the mandrel ends from one active region to another active region.
申请公布号 US2012124528(A1) 申请公布日期 2012.05.17
申请号 US201113227809 申请日期 2011.09.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WANG CHIEN-HSUN;CHANG CHIH-SHENG;LIN YI-TANG;SHIEH MING-FENG
分类号 G06F17/50;G03F1/00 主分类号 G06F17/50
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