发明名称 |
Methods for linewidth modification and apparatus implementing the same |
摘要 |
A linear-shaped core structure of a first material is formed on an underlying material. A layer of a second material is conformally deposited over the linear-shaped core structure and exposed portions of the underlying material. The layer of the second material is etched so as to leave a filament of the second material on each sidewall of the linear-shaped core structure, and so as to remove the second material from the underlying material. The linear-shaped core structure of the first material is removed so as to leave each filament of the second material on the underlying material. Each filament of the second material provides a mask for etching the underlying material. Each filament of the second material can be selectively etched further to adjust its size, and to correspondingly adjust a size of a feature to be formed in the underlying material. |
申请公布号 |
US2012118854(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201113373470 |
申请日期 |
2011.11.14 |
申请人 |
SMAYLING MICHAEL C.;BECKER SCOTT T.;TELA INNOVATIONS, INC. |
发明人 |
SMAYLING MICHAEL C.;BECKER SCOTT T. |
分类号 |
C23F1/02 |
主分类号 |
C23F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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