发明名称 |
RESIST COMPOSITION, RESIST FILM USING THE SAME AND PATTERNING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition capable of reducing a watermark defect and forming an excellently shaped resist pattern, and to provide a resist film using the same and a patterning method. <P>SOLUTION: A resist composition contains: (A) a resin that dissolves by an action of acid whose solubility in an alkaline developer increases; an onium salt that is a compound generating acid by irradiation of activated ray or radioactive ray and that includes the general formula (I), or a bis (alkylsulfonyl) imide anion and a tris (alkylsulfonyl) methide anion; (C) a resin that includes at least one of a fluorine atom and a silicon atom; and a combined solvent that includes a first solvent and a second solvent at least one of which has a standard boiling point of 200°C or higher. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012093733(A) |
申请公布日期 |
2012.05.17 |
申请号 |
JP20110210645 |
申请日期 |
2011.09.27 |
申请人 |
FUJIFILM CORP |
发明人 |
YAMAMOTO KEI;IIZUKA YUSUKE;SHIBUYA AKINORI;YAMAGUCHI SHUHEI |
分类号 |
G03F7/004;C07C309/17;C07C381/12;G03F7/039;G03F7/075;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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