发明名称 RESIST COMPOSITION, RESIST FILM USING THE SAME AND PATTERNING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition capable of reducing a watermark defect and forming an excellently shaped resist pattern, and to provide a resist film using the same and a patterning method. <P>SOLUTION: A resist composition contains: (A) a resin that dissolves by an action of acid whose solubility in an alkaline developer increases; an onium salt that is a compound generating acid by irradiation of activated ray or radioactive ray and that includes the general formula (I), or a bis (alkylsulfonyl) imide anion and a tris (alkylsulfonyl) methide anion; (C) a resin that includes at least one of a fluorine atom and a silicon atom; and a combined solvent that includes a first solvent and a second solvent at least one of which has a standard boiling point of 200&deg;C or higher. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012093733(A) 申请公布日期 2012.05.17
申请号 JP20110210645 申请日期 2011.09.27
申请人 FUJIFILM CORP 发明人 YAMAMOTO KEI;IIZUKA YUSUKE;SHIBUYA AKINORI;YAMAGUCHI SHUHEI
分类号 G03F7/004;C07C309/17;C07C381/12;G03F7/039;G03F7/075;H01L21/027 主分类号 G03F7/004
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