| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high electron mobility transistor-device capable of achieving voltage accumulation effect by an equivalent circuit, and having a characteristic that a breakdown voltage is high. <P>SOLUTION: High electron mobility transistors are defined by a manufacturing process and connected in series by an internal connection method, thereby obtaining a series connection type high electron mobility transistor-device. A method of manufacturing the same is also provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
