发明名称 CLEANING AGENT FOR MULTI-DRUG TYPE SEMICONDUCTOR SUBSTRATE, CLEANING METHOD USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a cleaning agent of a multi-drug type semiconductor substrate that suppresses or prevents the damage of a gate insulator and a substrate, etc., can effectively remove impurity adhered to the surface of a semiconductor substrate, particularly, deposit such as resist on which ion implantation is performed, and has excellent safety, and to provide a cleaning method using the cleaning agent, and a manufacturing method of a semiconductor element. <P>SOLUTION: A multi-drug type cleaning agent uses the mixture of at least a first agent and a second agent in cleaning a semiconductor substrate as a cleaning agent of a semiconductor substrate. The first agent includes an amine compound, the second agent includes an oxidizer, and the multi-drug type cleaning agent further uses alkylene carbonate by combining the alkylene carbonate with the first agent and the second agent. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012094703(A) 申请公布日期 2012.05.17
申请号 JP20100241083 申请日期 2010.10.27
申请人 FUJIFILM CORP 发明人 KAMIMURA TETSUYA
分类号 H01L21/304;C11D1/66;C11D3/10;C11D3/20;C11D3/30;C11D3/39;C11D17/00 主分类号 H01L21/304
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