| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wiring structure of a display device such as an organic EL display or a liquid crystal display, in which a stable interface can be formed between an oxide semiconductor layer and a metal film included in a source electrode or a drain electrode, for example. <P>SOLUTION: A wiring structure includes on a substrate, a semiconductor layer of a thin film transistor and a metal wiring film in order from the substrate side. A barrier layer is included between the semiconductor layer and the metal wiring film. The semiconductor layer includes an oxide semiconductor and the barrier layer includes a Ti oxide film. The Ti oxide film and the semiconductor layer are directly connected to each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
