| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of miniaturization of an element and capable of reducing on-resistance, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor layer 3 is formed on a P<SP POS="POST">+</SP>-type silicon substrate 2 forming a drain region. A plurality of trenches 4 that penetrate through the semiconductor layer 3 and reach surface portions of the silicon substrate 2 are formed. Insulating films 5 are formed so as to cover the internal surfaces of the trenches 4, and the insides of the trenches 4 are filled with gate electrodes 6. The semiconductor layer 3 includes P<SP POS="POST">-</SP>-type drift layers 7 and N<SP POS="POST">-</SP>-type resurf layers 8 that are alternately disposed on the silicon substrate 2, an N-type base region 9 formed on the drift layers 7 and the resurf layers 8, and P<SP POS="POST">+</SP>-type source regions 10 formed in surface portions of the base region 9. <P>COPYRIGHT: (C)2012,JPO&INPIT |
