发明名称 |
Nonvolatile Memory Devices, Erasing Methods Thereof and Memory Systems Including the Same |
摘要 |
Disclosed are erase methods for a memory device which includes a substrate and a plurality of cell strings provided on the substrate, each cell string including a plurality of cell transistors stacked in a direction perpendicular to the substrate. The erase method includes applying a ground voltage to a ground selection line connected with ground selection transistors of the plurality of cell strings; applying a ground voltage to string selection lines connected with selection transistors of the plurality of cell strings; applying a word line erase voltage to word lines connected with memory cells of the plurality of cell strings; applying an erase voltage to the substrate; controlling a voltage of the ground selection line in response to applying of the erase voltage; and controlling voltages of the string selection lines in response to the applying of the erase voltage. |
申请公布号 |
US2012120740(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201113295335 |
申请日期 |
2011.11.14 |
申请人 |
SHIM SUNIL;JANG JAEHOON;CHOI JUNGDAL;LEE WOONKYUNG;KIM KIHYUN;SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
SHIM SUNIL;JANG JAEHOON;CHOI JUNGDAL;LEE WOONKYUNG;KIM KIHYUN |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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