发明名称 |
NON-VOLATILE MEMORY DEVICE |
摘要 |
A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers. |
申请公布号 |
US2012120728(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201113191581 |
申请日期 |
2011.07.27 |
申请人 |
KIM SU-KYOUNG;CHOI GIL-HEYUN;LEE JONG-MYEONG;PARK IN-SUN;PARK JI-SOON;SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM SU-KYOUNG;CHOI GIL-HEYUN;LEE JONG-MYEONG;PARK IN-SUN;PARK JI-SOON |
分类号 |
G11C11/34;H01L21/336;H01L29/788 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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