SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor device includes a semiconductor substrate and a first gate structure. The semiconductor substrate has a first groove and a first pillar defined by the first groove. The first groove and the first pillar are adjacent to each other. The first gate structure is disposed in the first groove. The first gate structure includes a first gate insulating film and a first gate electrode. The first gate structure is separated by a first gap from the first pillar.