| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film formation device capable of controlling the temperature of its discharge electrode while not having a special heating mechanism in the discharge electrode, and to provide a film formation method. <P>SOLUTION: The film formation device comprises: a discharge electrode 5 for generating plasma for forming a film on a substrate 30; electrode temperature measurement means for measuring a temperature of the discharge electrode 5; and a substrate table for holding the substrate 30 on one surface thereof, which are put in a film formation chamber 2. The film formation device further comprises: film formation chamber pressure measurement means for measuring a pressure in the film formation chamber 2; gas introduction means for introducing gas into the film formation chamber 2; gas exhausting means 8 for exhausting gas so that the pressure in the film formation chamber 2 becomes a predetermined pressure; and control means for controlling, based on the temperature of the discharge electrode 5, an intermittent operation in which the change in operation condition of at least one of the gas introduction means and the gas exhausting means 8 is repeated. <P>COPYRIGHT: (C)2012,JPO&INPIT |
