发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To reduce an installation space of a processing unit and the size of the apparatus and improve throughput by reducing the processing time and the transfer time of substrates. <P>SOLUTION: A substrate processing apparatus includes: a heating plate 51 forming a heating part 50 for heating wafers W; a cooling plate 41 disposed below the heating plate 51 and forming a cooling part 40 for cooling the wafers; multiple image development processing parts 60 disposed at positions which face the heating part 50 and the cooling part 40 which are respectively disposed at a higher position and a lower position and forming a liquid film of a process liquid on the wafers W; a main arm A1 carrying in or carrying out the wafers W from the cooling part 40 and the image development processing parts 60; and an elevating support pin 80 delivering the wafers W received from the main arm A1 to the cooling part 40 and moving to a position in the vicinity of the heating part 50. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012094617(A) 申请公布日期 2012.05.17
申请号 JP20100239399 申请日期 2010.10.26
申请人 TOKYO ELECTRON LTD 发明人 TAUCHI HIROSHI
分类号 H01L21/683;G03F7/16;G03F7/30;H01L21/027;H01L21/677 主分类号 H01L21/683
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