发明名称 LOW-PERMITTIVITY RESIN COMPOSITION
摘要 The present invention relates to a low-dielectric resin composition having sufficiently low dielectric constant and dissipation factor, a low-dielectric film formed of the low-dielectric resin composition, processes for producing the low-dielectric resin composition and the low-dielectric film, and a coating agent for low-dielectric films. According to the present invention, there are provided (1) a low-dielectric resin composition including hollow silica particles having an average particle size of from 0.05 to 3 μm and a BET specific surface area of less than 30 m2/g, and a matrix resin in which the hollow silica particles are dispersed; (2) a low-dielectric film including the low-dielectric resin composition; (3) a process for producing the low-dielectric resin composition which includes the steps of preparing hollow silica particles (A) containing air inside thereof or core/shell type silica particles (B) in which a material capable of being dissipated by calcination to form hollow portions therein is encapsulated; calcination the hollow silica particles (A) or the core/shell type silica particles (B) at a temperature higher than 950° C. to prepare hollow silica particles (C); and dispersing the hollow silica particles (C) in a matrix resin-forming material to prepare a dispersion of the particles; and (4) a coating agent for low-dielectric films including the hollow silica particles, and a matrix resin-forming material in which the hollow silica particles are dispersed.
申请公布号 US2012123021(A1) 申请公布日期 2012.05.17
申请号 US201013383698 申请日期 2010.07.06
申请人 YANO TOSHIHIRO;KOMATSU MASAKI;KAO CORPORATION 发明人 YANO TOSHIHIRO;KOMATSU MASAKI
分类号 H01B3/40;B05D3/00;B05D5/00;B82Y30/00;C09D5/25;H01B3/30 主分类号 H01B3/40
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