发明名称 |
Nonvolatile Memory Elements |
摘要 |
Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer. |
申请公布号 |
US2012122291(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201113337611 |
申请日期 |
2011.12.27 |
申请人 |
MALHOTRA SANDRA G.;KUMAR PRAGATI;BARSTOW SEAN;CHIANG TONY;PHATAK PRASHANT B.;WU WEN;SHANKER SUNIL;INTERMOLECULAR, INC. |
发明人 |
MALHOTRA SANDRA G.;KUMAR PRAGATI;BARSTOW SEAN;CHIANG TONY;PHATAK PRASHANT B.;WU WEN;SHANKER SUNIL |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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