MESA TERMINATION STRUCTURES FOR POWER SEMICONDUCTOR DEVICES AND METHODS OF FORMING POWER SEMICONDUCTOR DEVICES WITH MESA TERMINATION STRUCTURES

摘要

An electronic device includes a drift layer having a first conductivity type, a buffer layer having a second conductivity type, opposite the first conductivity type, on the drift layer and forming a P-N junction with the drift layer, and a junction termination extension region having the second conductivity type in the drift layer adjacent the P-N junction. The buffer layer includes a step portion that extends over a buried portion of the junction termination extension. Related methods are also disclosed.