| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that an insulating film covering a region from a gate electrode to a source and a drain is a factor of increased parasitic capacitance. <P>SOLUTION: A gate electrode is formed on a substrate having a semiconductor layer. A source electrode and a drain electrode are oppositely formed on the semiconductor layer so as to be spaced apart from the gate electrode. A gate side insulating film, which is disposed apart from the source electrode and the drain electrode, is formed on the semiconductor layer between the source electrode and the drain electrode. The gate side insulating film has an opening for a gate in which the bottom of the gate electrode is filled. <P>COPYRIGHT: (C)2012,JPO&INPIT |
