ACTIVE LAYER FOR SILICON LIGHT-EMITTING DEVICES AND METHOD FOR MANUFACTURING THE SAME

摘要

An active layer for silicon light-emitting devices has a layered film structure of first and second layers alternately stacked on a substrate. The first layer contains a silicon compound, and the second layer contains another silicon compound and has a larger band gap than the first layer. The layered film structure contains silicon nanoparticles. The first layer contains more silicon atoms than the second layer, and at least one of the silicon nanoparticles exists across at least one of the interfacial boundaries between the first layer and the second layer.