| 摘要 |
The present invention is related to microelectronic technologies, and discloses specifically a mixed junction source/drain field-effect-transistor and methods of making the same. The field-effect-transistor with mixed junction source/drain comprises a semiconductor substrate, a gate structure, sidewalls, and source and drain regions having mixed junction structures, which are combinations of Schottky and P-N junctions. Compared with Schottky junction field-effect-transistors, the mixed junction source/drain field-effect-transistor described in the present invention has the characteristics of relatively low source/drain leakage. At the same time, this field-effect-transistor has lower source/drain series resistances than that associated with P-N junction field-effect-transistors.
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