发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 According to one embodiment, there is provided a method of manufacturing a semiconductor device having a buffer circuit. In the method, a plurality of semiconductor elements is formed on a semiconductor substrate. The plurality of semiconductor elements are connected in parallel to each other in the buffer circuit. In the method, driving forces of the formed semiconductor elements is evaluated. In the method, one mask is selected from a plurality of masks based on the evaluating. The plurality of masks are formed in advance to have different wiring mask patterns to cause the numbers of semiconductor elements connected in parallel with each other among the plurality of semiconductor elements of the buffer circuit to be different from each other. In the method, a wiring pattern corresponding to the wiring mask pattern is formed by using the selected one mask.
申请公布号 US2012122248(A1) 申请公布日期 2012.05.17
申请号 US201113234582 申请日期 2011.09.16
申请人 HIRAYU TSUYOSHI;KABUSHIKI KAISHA TOSHIBA 发明人 HIRAYU TSUYOSHI
分类号 H01L21/66 主分类号 H01L21/66
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