| 摘要 |
1,101,906. Semi-conductor devices; circuit assemblies. SIEMENS A.G. 25 April, 1966 [26 April, 1965], No. 17956/66. Headings HlK and HlR. A semi-conductor circuit or assembly of devices is made by forming the components at desired areas of one face of a semi-conductor wafer, by forming electrical input and output connections for the components and if the components are to form a circuit by also forming interconnection between the components, by selectively etching away portions of the wafer which have no electrical or mechanical function in the circuit or assembly, and by filling the spaces between the semi-conductor bodies thus formed with an electrically insulating material. Strip-shaped gold leads are suitable connections. Each body may contain one or more components. Several assemblies or circuits may be produced simultaneously from a single wafer, each encapsulated unit for convenience being linked to its neighbours by a strip of encapsulant (Fig. 4, not shown). Groups of planar silicon devices such as transistors and diodes may be manufactured or the bodies may contain individual transistors which may be split from the assembly after the insulating material has hardened. Suitable insulating materials are epoxy, silicone, and polyester resins. The wafer is etched into bodies and the insulating material applied to the gaps preferably while the active face of the device is attached to an etch resistant plate. The insulating material may be applied by silk-screening or by the use of a press mould or cast mould. A mould may be removable or, when made of synthetic resin, may be left in position to form part of the casing of a device. The insulating material used to fill the gaps may be the same as or different from that used to coat the active face. Additives include siccatives (such as boron trioxide, calcium oxide, calcium sulphate, calcium hydride, and barium hydride) and heat-conducting fillers (such as magnesia and alumina). The potted group may be used as it is or may be enclosed in a metal can. |
