发明名称 |
Interconnection between sublithographic-pitched structures and lithographic-pitched structures |
摘要 |
An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different. |
申请公布号 |
GB2485493(A) |
申请公布日期 |
2012.05.16 |
申请号 |
GB20120000163 |
申请日期 |
2010.08.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SARUNYA BANGSARUNTIP;DANIEL C EDELSTEIN;HO-CHEOL KIM;STEVEN KOESTER;PAUL M SOLOMON;WILLIAM HINSBERG |
分类号 |
H01L21/44;H01L21/311;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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