STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES,申请号EP20100797925-传众专利搜索

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发明名称	STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES
摘要
申请公布号	EP2452371(A1)	申请公布日期	2012.05.16
申请号	EP20100797925	申请日期	2010.07.09
申请人	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA	发明人	FARRELL, ROBERT, M.;HARDY, MATTHEW, T.;OHTA, HIROAKI;DENBAARS, STEVEN, P.;SPECK, JAMES, S.;NAKAMURA, SHUJI
分类号	H01L33/02	主分类号	H01L33/02
代理机构		代理人
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