| 发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
A semiconductor device according to the present invention includes a semiconductor substrate, and an interlayer dielectric film, formed on the semiconductor substrate, having a multilayer structure of a compressive stress film and a tensile stress film. |
| 申请公布号 |
EP2341531(A4) |
申请公布日期 |
2012.05.16 |
| 申请号 |
EP20090815903 |
申请日期 |
2009.09.25 |
| 申请人 |
ROHM CO., LTD. |
发明人 |
NAKAGAWA, RYOSUKE;NAKAO, YUICHI |
| 分类号 |
H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/768 |
| 代理机构 |
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